Structural and Electrical Transport Properties of Sputter-Deposited SiC Thin Films

Abstract

In the present study, SiC films are fabricated by a cost-effective and simple approach of RF magnetron sputtering. The fabrication of SiC thin films is carried out at 900 °C in 5mT Ar atmosphere at 150W power. Thus, the thin films are produced at lower temperature and toxic free environment than conventional methods. The structural characterizations of thin films are performed using XRD, XPS, FE-SEM and EDS techniques. A Metal-Semiconductor-Metal (MSM) junction is fabricated using gold electrodes by shadow sputtering in point contact geometry. The electrical transport properties of the SiC thin film are analyzed using Current-voltage (I-V) and Capacitance-Voltage-Frequency (C-V-F) measurements. The anomalous peaks observed in C-V characteristics and non-ideal behavior of I-V characteristics provide important information about electronic properties and structural aspects of fabricated thin film.