Abstract
We fabricated solution-processed gallium-doped indium oxide (GIO) thin-film transistors (TFTs). The electrical property, crystallinity, and transmittance were investigated as a function of gallium content. Varying the gallium/indium ratio is found to have a significant effect on structural and electrical properties of thin films. The shrinkage of the lattice of a GIO film originates from substitution of Ga on In sites in the In2O3 lattice, which was verified by X-ray diffraction (XRD) analysis. By increasing the gallium ratio of the channel material, the GIO film shows an amorphous phase. The optimized GIO film (Ga/In= 0.35) has an electron mobility of 3.59 cm2 V-1 s-1, a threshold voltage of 0.1 V, an on/off current ratio of 8.2×107, and a subthreshold slope of 0.9 V/decade, and is highly transparent (∼92%) in the visible region.
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