Abstract
PLZT films prepared by a sol-gel process were fabricated on indium tin oxide (ITO)-coated glass substrates using rapid thermal annealing (RTA). The films crystallized into the perovskite phase when annealed at 750°C for 5 min. X-ray diffraction (XRD) and Raman spectroscopy results indicate that the morphotropic phase boundary of PLZT films shifts toward the Ti-rich side, in contrast to that of bulk ceramics. A dielectric constant of 1270 for the 2/55/45 composition was the maximum value observed. With increasing Zr content in the 2 mol% La modified films, the coercive field decreased from 52.9 to 30 kV/cm and the remanent polarization increased from 22.7 to 50.6 μC/cm 2. Optical transmittance increased by increasing optical isotropy as the Zr content increased.
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