Abstract
This study examined the micro-structural and electrical properties of nitrogen-ion implanted ZnO nanorods. Nitrogen ions (N +s) with energy of 50 keV and beam flux of 10 16 particles/cm 2 were implanted on vertically-aligned ZnO nanorods. Energy dispersive X-ray spectroscopy measurements showed that N +s were spread uniformly over the nanorods. Extended X-ray absorption fine structure (EXAFS) measurements suggested that the implanted N +s had partially substituted for the oxygen sites. The I–V characteristic curves showed that the N +-implanted nanorods were n-type. Moreover, annealing at 800 °C enhanced the charge carrier density in the nanorods by 10-fold, compared to the N +-implanted and unannealed ZnO nanorods.
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