Abstract
thin films were prepared on substrates using a magnetron co-sputtering technique and were annealed at various temperatures in a vacuum and a nitrogen ambient. The crystallinity of the films annealed in a vacuum ambient was higher than that of films annealed in nitrogen ambient. Samples annealed above in nitrogen ambient exhibited a second phase in the films. The incorporation of oxygen into the films produced the decrease of crystallinity and significantly influenced the temperature coefficient of resistance of the films.
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