Structural and electrical properties of HgTe thin films

Abstract

Thin films of HgTe were thermally, flash, evaporated onto glass substrates at room temperature. The structural investigations showed that stoichiometric and amorphous films were produced. The electrical resistivity, thermoelectric power and space charge characteristics were also studied at room and elevated temperatures. The measurements indicated that HgTe thin films behave as a p-type semiconductor with current carrier concentration between 10 21 and 10 25 m −3. Two conduction mechanisms were applied to interpret the obtained results.