Abstract
The HfOxNy films grown at 300 °C in plasma and N2 ambient using hafnium tertiary-butoxide (Hf[OC(CH3)3]4) as the precursor in the absence of O2 were prepared to improve the thermal stability of HfO2-based gate dielectrics. The HfOxNy films showed a 200 °C higher crystallization temperature and more suppression in the growth of an interfacial layer than that of HfO2 films when films were annealed at 700 °C in a nitrogen ambient. The HfOxNy films showed an improvement of interface charge trap densities by a forming gas annealing treatment, resulting in much more improvement in drive current and subthreshold swing (S.S.) than those of HfO2 films.
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