Abstract
The double perovskite material, Nd2CoMnO6, was prepared by a standard mixed oxide route. We found the monoclinic structure of the studied material from X-ray diffraction data analysis. The microstructure study shows that the presence of almost uniform distribution of grains with small voids. The analysis of both temperature and frequency variation of electrical and dielectric characteristics have been discussed. The frequency dependence of dielectric parameter was explained as per the Maxwell-Wagner model. An anomaly behaviour was observed in the temperature dependence dielectric curve corresponds to the ferroelectric-paraelectric phase transition. We found the presence of both grain and grain boundary effects in the complex impedance analysis. The occurrence of the negative temperature coefficient of resistance (NTCR) behaviour indicates this material is a semiconducting type of material. From the analysis of J-E characteristics curve, we found the low low-leakage current density. The scaling nature of Z″ and M″ specifies that the relaxation phenomena are almost independent of temperature. The existing property makes more appropriate for modern electronic device.
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