Abstract
The study of the oxidation process of amorphous SiGe alloys is reported from the microstructural characteristics of the obtained oxides by wet oxidation at 700 °C during 30 minutes. The analysis has been carried out by TEM, Raman, FTIR and XPS measurements which reveal that the whole layers are partially oxidized, (Si,Ge)O y, without Ge pile-up. The deduced suboxides concentrations show the preferential silicon oxidation in spite of the simultaneous oxidation of Si and Ge. Likewise, a comparison with the oxidation of the polycrystalline alloys is performed to stand out the role of the Si and Ge diffusivities.
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