Abstract
A structural and compositional study of the effects of different thicknesses of InAlAs in the combined two-level InAlAs-InGaAs capping layer on InAs/GaAs quantum dots has been performed. Scanning transmission electron microscopy has been employed to determine the dot size and shape. Energy-loss filtered transmission electron microscopy imaging has been has been used to qualitatively determine the elemental distribution in the vicinity of quantum dots. An increase in the height of the quantum dots has been observed when the thickness of InAlAs capping layer is increased. In addition, there is evidence to suggest that the concentration of aluminium near the apex of the quantum dots is significantly reduced. Based on surface chemical potential thermodynamics, the increased height of InAs/GaAs quantum dots with increasing InAlAs capping layer thickness may be explained as a consequence of the higher indium adatom density above the capping layer and the subsequent suppression of the indium atom detachment rate from the InAs quantum dots.
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