Abstract
InAs quantum dots (QDs) are grown on bare InP(001) via droplet epitaxy (DE) in metal–organic vapor phase epitaxy (MOVPE). Capping layer engineering, used to control QD size and shape, is explored for DE QDs in MOVPE. The method allows for the tuning of the QD emission over a broad range of wavelengths, ranging from the O‐ to the L‐band. The effect of varying the InP capping layer is investigated optically by macro‐ and micro‐photoluminescence (PL, µPL) and morphologically by transmission electron microscopy (TEM). A strong 500 nm blueshift of the QD emission wavelength is observed when the capping layer is reduced from 20 to 8 nm, which is reflected by a clear size reduction of the buried QDs.
Highlights
We note that these growth parameters yield a quantum dots (QDs) density of %9 Â 108 cmÀ2.[18]. After complete crystallization, an InP capping layer with variable thickness was grown at the same temperature of 520 C and the structures were completed with an 80 nm InP layer grown at 600 C
A first insight into the effect of the capping layer on the buried QDs is found through transmission electron microscopy (TEM) analysis
We applied a capping layer engineering method to InAs/InP QDs grown by droplet epitaxy in metal–organic vapor phase epitaxy (MOVPE)
Summary
All samples were grown in a close-coupled showerhead (CCS) MOVPE reactor, using H2 as carrier gas. Indium droplets were first deposited on an InP buffer layer of thickness 300 nm which. The droplets were deposited at 320 C and. Www.advancedsciencenews.com www.pss-rapid.com thereafter crystallized into InAs QDs under an AsH3 flow whilst ramping the temperature to 520 C. www.advancedsciencenews.com www.pss-rapid.com thereafter crystallized into InAs QDs under an AsH3 flow whilst ramping the temperature to 520 C The choice of this specific crystallization temperature proved to be the optimum for obtaining high-quality QDs in our growth experiments.[18] We note that these growth parameters yield a QD density of %9 Â 108 cmÀ2.[18] After complete crystallization, an InP capping layer with variable thickness was grown at the same temperature of 520 C and the structures were completed with an 80 nm InP layer grown at 600 C. For additional details on the growth sequence, we refer to our previous work.[18]
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