Structural Analysis of Si(OEt)4 Deposits on Au(111)/SiO2 Substrates at the Nanometer Scale Using Focused Electron Beam-Induced Deposition.

Abstract

The focused electron beam-induced deposition (FEBID) process was used by employing a GeminiSEM with a beam characteristic of 1 keV and 24 pA to deposit pillars and line-shaped nanostructures with heights between 9 nm and 1 μm and widths from 5 nm to 0.5 μm. All structures have been analyzed to their composition looking at a desired Si/O/C content measuring a 1:2:0 ratio. The C content of the structure was found to be ∼over 60% for older deposits kept in air (∼at room temperature) and less than 50% for later deposits, only 12 h old. Upon depositing Si(OEt)4 at high rates and at a deposition temperature of under 0 °C, the obtained Si content of our structures was between 10 and 15 atom % (compositional percentage). The FEBID structures have been deposited on Au(111)/SiO2. The Au(111) was chosen as a substrate for the deposition of Si(OEt)4 due to its structural and morphological properties. With its surface granulation following a Chevron pattern and surface defects having an increased contribution to the changes in the composition of the final structure content, the Au(111) surface characteristic behavior at the deposition of Si(OEt)4 is an increase in the O ratio and a reduction in the nanodeposit heights.