Abstract
Hydrogenated amorphous carbon nitride (a-CNx:H) films were formed from the decomposition of CH3CN in the microwave discharge flow of Ar. During the film formation, the radio-frequency (RF) bias voltages (−VRF) were applied to the substrate stage in the range of 0 V ≤ −VRF ≤ 100 V. The change of the chemical bonding states upon the application of −VRF was investigated based on the X-ray photoelectron spectroscopy (XPS), FTIR, and Raman scattering spectroscopy. The [N]/([N]+[C]) ratios of films were in the range of 0.14–0.26 with the negative dependence on −VRF, which is the result of the chemical sputtering by the Ar+ bombardment induced by −VRF. From the deconvolution analyzes of the XPS and Raman spectra, the development of the two-dimensional carbon network and of the one--dimensional −C=N− network is suggested upon the application of −VRF.
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