Abstract
Epitaxy of Sr and SrO films onto hydrogen-terminated Si (111) has been demonstrated. The use of hydrogen-terminated Si (111) has enabled the epitaxy of metallic Sr films, whereas direct epitaxy on a clean 7×7 Si (111) surface has not been successful. The alternate supply of Sr and O during growth has made it possible to grow good epitaxial SrO films. It has been revealed by electron energy loss spectroscopy that stoichiometric SrO films are obtained by this method.
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