Abstract
Sharp interface structure of SrO film on hydrogen-terminated Si(100) is obtained by an alternate supply of Sr metal and O2 gas. The hydrogen-terminated Si is chemically inactive, especially against oxidation. The method of alternate supply of Sr and O2 gas makes it possible to cover Si surface with the first Sr layer for prevention of formation of Si–O bonding when O2 gas is supplied to the substrate. Epitaxial SrO films are grown when the substrate temperature is maintained above 400°C. The orientation relationship between epitaxial SrO and Si is found to be (100)SrO//(100)Si and [001]SrO//[001]Si.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
