Abstract
Proton irradiation of undoped n-InAs allowed a compensated material to be obtained with the degree of compensation K∼0.6. A regime of irradiation was selected to provide for a uniform distribution of radiation defects in depth of the semiconductor plate. The free electron density in irradiated InAs reaches up to 1×1018 cm−3, which corresponds to the Fermi level fixed in the region of allowed states with a wave vector of κ=0 in the conduction band (in contrast to other AIIIBV semiconductor compounds, in which the Fermi level of a material with radiation defects occurs in the middle of the bandgap). The obtained results confirm the model of Brudnyi et al. [1].
Published Version
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