Abstract
The first results of experiments on direct photo-etching of heated PTFE using a 10 Hz X-ray source based on a laser-irradiated gas puff target are presented. X-ray radiation in the wavelength range from 6 to 20 nm was produced as a result of irradiation of a double-stream gas puff target with Nd:YAG laser pulses of energy 0.8 J and time duration 3 ns. The resulting X-ray pulses with energy of about 100–200 mJ were used to irradiate samples of PTFE to create microstructures by direct photo-etching. Strong enhancement of the photo-etching process was observed for samples heated up to 300 °C.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
