Strong temperature dependence of transfer characteristics and time constants near freezing point of ionic liquid in an ambipolar electric double layer transistor

Abstract

The gating operation of electric double layer transistors (EDLTs) is typically conducted at low temperatures to prevent possible damage due to electrochemical reactions. We studied the temperature dependence of the transport properties of an EDLT with a molybdenum disulfide channel at low temperatures approaching the freezing point of the ionic liquid used for gating. The strong temperature dependence of the ambipolar transfer characteristics was attributed to the Arrhenius-type temperature dependence of the time constants of the drain current at a fixed gate voltage, which were estimated for both p- and n-channels. The time constants are explained in terms of the resistance and capacitance associated with the ionic liquid and electric double layer.