Abstract
We observe strong spin-orbit interactions in a two-dimensional electron system formed on $\mathrm{SrTi}{\mathrm{O}}_{3}(001)$ films grown epitaxially on p-Si(001). High-resolution transmission electron microscopy and related analytical techniques reveal a sharp interface between Si and $\mathrm{SrTi}{\mathrm{O}}_{3}$. Strain mapping analysis shows in-plane strain in $\mathrm{SrTi}{\mathrm{O}}_{3}$ very close to the interface. Analysis of the low temperature magnetoconductance measurements reveals that both quantum interference and electron-electron interactions are important. The contributions of these two quantum phenomena to the temperature and magnetic field dependence of the conductance and Hall effect are separated. The electron system has carrier concentrations larger than ${10}^{14}\mathrm{c}{\mathrm{m}}^{\ensuremath{-}2}$, appears to be confined within \ensuremath{\sim}4 nm, and has an estimated spin-splitting energy \ensuremath{\sim}12 meV.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
