Abstract
Strong room-temperature photoluminescence (PL) from SiO2/Si(110)/SiO2 quantum wells (QWs) is observed, for the first time. The PL intensity increases with the decrease of the Si(110) well thickness. Furthermore, when the upper SiO2 layer is removed, no PL peaks could be observed. But the luminescence is recovered when the samples were exposed to air for several months with the re-formation of Si–SiOx interface, and slightly dependent of temperature. These results indicate that both of the quantum confinement effect and the interface effect play an important role in the luminescence properties of Si(110) QWs.
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