Abstract
Heavily Pb-doped Bi2212 single crystals with carefully controlled oxygen compositions were prepared and their magnetization curves were studied as a function of carrier doping level from heavily overdoped ( T c = 67 K) to near optimally-doped ( T c = 96 K) states. All the Pb-doped samples showed much improved J c- H properties compared to the conventional Pb-free Bi2212 crystals. In particular, the moderately overdoped crystals maintained high J c and H irr up to high temperatures and these values surpassed those for the Pb-ion irradiated Bi2212 with an optimized fluence. Dramatically improved flux pinning properties in the present material are possibly due to generation of temperature and field-induced new pinning centers, as suggested by anomalous dependence of J c both on temperature and magnetic field.
Published Version
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