Abstract
We report here on a study of the photoluminescence (PL) and photoreflectance (PR) spectra from InGaAs/AlAsSb multiple quantum wells with antimony interface terminations that were grown by molecular beam epitaxy. The PL spectrum exhibits a broad peak between 4 and 300 K , composed of interface-related transitions and transitions between confined energy levels in the well ( E C). Features of the quantum well related interband transitions ( E n H m ) are clearly observed in the PR spectra between 55 and 300 K . Below 150 K , E C shifts significantly toward lower energy from E 1 H 1, indicating strong carrier localization.
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