Abstract
A new strained InGaAs/InP/InAsP antisymmetric coupled-quantum-well (CQW) structure with significant enhancement of the blue and red Stark effects in the first heavy-hole-to-electron excitonic transition is proposed in this letter. The calculated amount of blueshift is about 48 meV as the applied electric field varied from 0 to 90 kV/cm and the red Stark shift of about 56 meV can be achieved with an applied electric field in the 0 to −90 kV/cm range. The results of the strong Stark effect in the antisymmetric CQW structure may have potential applications in sophisticated new electronic devices, such as optical switching devices and tunable lasers.
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