Abstract
Using first-principles density-functional theory, we have investigated the intrinsic and extrinsic doping properties of CoAl2O4 by calculating the transition energies and formation energies of intrinsic and extrinsic defects. We find that CoAl2O4 exhibits strong asymmetrical doping properties: Although excellent p-type conductivity can be achieved by Li or Na doping at O-rich growth condition, n-type conductivity cannot be achieved by any intrinsic or extrinsic dopants at any growth conditions. These asymmetrical doping properties are attributed to the formation of intrinsic defects, particularly AlCo, which has very low formation energy at all growth conditions. Our results suggest that for better use of CoAl2O4, the electronic devices should require CoAl2O4 to exhibit p-type conductivity.
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