Abstract
SUMMARYA stroboscopic scanning‐ electron microscope (SEM) with 1 keV electrons has been developed to analyse the internal voltage waveforms in very large scale integrated circuits (VLSIs). A field emission gun and a short focal length objective lens are used to obtain a fine probe. Secondary electrons returning up through the objective lens are detected and analysed by a hemispherical retarding field energy analyser. The working distance of the objective lens is 3 mm, and a small stable probe of 0.1 μm in diameter with 1.6 nA in beam current is obtained. The linearity of the potential measurement is fairly good in spite of analysing secondary electrons which pass through the magnetic field. A minimum time resolution of 500 ps as well as a voltage resolution of 50 mV can be measured. This stroboscopic SEM has been successfully applied to evaluation of high speed waveforms in a ECL‐4K bit bipolar RAM.
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