Abstract
This paper presents a detailed compact-modeling investigation of the string current in decananometer nand Flash arrays. This investigation allows, first of all, to highlight the role of velocity saturation, low-field mobility, and drain-induced barrier lowering on the string current versus read voltage characteristics. Results are validated on a 41-nm technology for different positions of the selected cell along the nand string, different pass voltages, and different array background patterns. The effect of cycling on the string current is then investigated by means of postcycling bake experiments, showing that the impact of charge trapping/detrapping and interface state generation/annealing varies as a function of the read current level. Compact-modeling results display that, at low read currents, charge trapping/detrapping represents the main damage mechanism for the cells, while interface states come into play for read currents close to the string saturation level via mobility degradation.
Published Version
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