Abstract
The description of crystal growth in a Bridgman configuration subjected to non‐steady‐state solidification is reconsidered with attention to the phenomena associated with the presence of the solid/liquid (S/L) interface in the system. By considering a driving force for the displacement of the S/L interface, which could depend on dopant adsorption in the interfacial layer, it is demonstrated that oscillations in the growth velocity could appear, inducing microsegregations or striations even if the boundary conditions applied to the system are monotonic functions. The stability of the growth regime is discussed. The frequency and amplitude of the compositional fluctuations are calculated and shown to be in qualitative agreement with some observations. 1‐g and 0‐g results in doped semiconductors could support this theory.
Published Version
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