Abstract

We report the synthesis, morphology, and properties of poly(3-hexylthiophene)-block-poly(butyl acrylate) (P3HT-b-PBA) for stretchable electronics applications, which are consisted of semiconducting P3HT and low glass transistion temperature (Tg) PBA blocks. The P3HT-b-PBA thin films self-assembled into fibrillar-like nanostructures and maintained the edge-on oreientation even at a low P3HT composition, based on the results from atomic force microscopy (AFM) and grazing incidence X-ray diffraction (GIXD). By varying the P3HT/PBA ratio, the tensile modulus decreased as the block length of PBA increased, from 0.93 GPa for P3HT to 0.19 GPa for P3HT-b-PBA12k. The field effect transistor (FET) using P3HT-b-PBA as the active layer exhibited a high p-type mobility over 10–2 cm2 V–1 s–1, indicating its good charge transporting ability. Furthermore, the P3HT-b-PBA6k based FET under 100% strain had a high mobility of 2.5 × 10–2 cm2 V–1 s–1 with an on/off ratio of 7.2 × 106, and it maintained over 10–2 cm2 V–1 s–1 fo...

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