Abstract
The reliability characteristics of Al/CeO2/p-Si devices were studied by the constant voltage stress (CVS) biased in accumulation mode. The charge trapping and stress-induced leakage current (SILC) of the MOS capacitors were found. The SILC was dominant at low field, which indicated that the trap generation rate (α) was increased with increasing voltage. Meanwhile, the charge trapping was dominant at high field, which indicated that the trapping time constant (τ) was decreased with increase voltage and the trap capture cross-section (σ) was determined to be around 1.24×10-22 cm2.
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