Stresses in silicon dioxide films deposited from dielectric targets: results of atomistic modeling

Abstract

The previously proposed method of molecular dynamics simulation of the deposition of thin films from metal targets is adapted to the case of dielectric targets and applied to silicon dioxide films. The possibility of not only silicon atoms leaving the target, but also clusters with oxygen atoms was taken into account by adding O=Si=O molecules to the flow of deposited atoms. Atomistic film clusters were obtained by high-energy and low-energy deposition at different percentages of molecules in the flow of deposited atoms. The values of the stress tensor components are calculated. With high-energy deposition, compressive stresses are observed, with low-energy deposition, tensile stresses are observed. The absolute values of the diagonal components of the stress tensor increase with increasing proportion of molecules in the flow of deposited atoms.