Abstract
We study the formation of self-assembled InGaAs quantum dots on GaAs substrate with a sub-micron platinum stripe pattern. Islands or quantum dots preferentially nucleate at the boundary of metal patterns. In addition, island density reduced region near the boundary of the metal pattern is found. Those results are attributed to the stress between metal stripe and GaAs surface, which produces a laterally stressed region around the metal stripe. Adatoms on this region preferentially migrate toward the edge of metal stripes with maximum stress. This result may show a possible way for the interconnection between randomly distributed self-assembled quantum dots and metal stripes.
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