Stress/strain distribution around implantation boundaries

Abstract

Abstract Ion implantation in ferrimagnetic garnet epilayers containing bubbles suppresses hard bubbles and defines the propagation tracks for moving bubbles. It has been recognized that the existence of a strain/stress gradient in the vicinity of an implantation boundary is responsible for the formation of charged walls to which bubbles are attached. Two elastic models describing the stress/strain distribution around an implantation boundary are presented. They rely on densities of defects, infinitesimal dislocations and point defects in the continuum approximation, Assuming a ribbon geometry reduces the elastic problem to a plane-strain one. Very compact expressions can be deduced from the point-defect model if the half-space is restricted to a plane. The dislocation model indicates that most of the elastic strain/stress is due to the lateral thrust exerted by the implanted ribbon on the surrounding elastic medium.