Numerical study on the effect of operating parameters on point defects in a silicon crystal during Czochralski growth I. Rotation effect

Abstract

In this study, relationship between the rotation effect and the density of point defects in a silicon crystal was investigated in a cusp-shaped magnetic Czochralski process. Vacancy and self-interstitial point defects were adopted as point defects. The rotation parameters under the investigation include the crucible rotational rate from 6 to 14 rpm and the crystal rotational rate from −10 to −20 rpm. It was found that the crucible rotational rate significantly affected the flow patterns in the melt, resulting in the significant change in the density of the point defects in the solid. The crystal rotational rate did not have much effect in determining the density of the point defects.