Abstract
Results are presented describing stress variations and relief due to patterning in GaAs grown by molecular beam epitaxy on both InP and Si substrates. The stress is analyzed using cathodoluminescence scanning electron microscopy in conjunction with the known behavior of light- and heavy-hole luminescence transitions. Both the energy positions and the separation between these transitions are used for quantitative analysis of the spatial variations of the stress across the etched patterns. Our observations reveal that the stress is uniaxial near the edge, changing to biaxial away from the edge. The stress is relieved at convex corners and in patterned areas of the order of 10 μm.
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