Abstract
Cathodoluminescence scanning electron microscopy studies reveal significant variations in stress across etched patterns of GaAs grown on both InP and Si substrates. The stress in the epilayer is relieved at convex corners and in patterned areas with dimensions on the order of 10 μm. The stress is uniaxial near the edge of a patterned region and changes to biaxial away from the edge, producing nonuniformities in the optical properties of patterned regions.
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