Stress Reduction of Solar Cell with Nanostructures on Silicon Chip Surface

Abstract

Silicon chip has been widely used in solar cell recently. The thinning of silicon chip, easily inducing surface defects, becomes necessary to produce solar cells more efficiently. The surface defects resulting in stress concentration on the silicon chip surface would be the source of chip failure. In this study, the finite element analysis was used to investigate the stress distribution near the surface crack of a solar cell on which the nanostructures were introduced to alleviate the induced stress. For the solar cell model, positive silver and negative aluminum electrodes were added on the top and bottom sides of silicon chip. The solar cell under four-point bending was simulated in analysis with and without nanostructures. The results show that the stresses reduce more than 50 % for the solar cell model with nanostructures. When the crack depth is deeper enough, the stress at crack tip is higher than that at junction near the electrode and the crack leads to the failure of solar cell. The effect of different section length of nanostructures on the stress distribution caused by the surface crack was also discussed.