Stress induced degradation features of very thin gate oxides

Abstract

The degradation features of very thin gate oxide after Fowler–Nordheim stress have been studied. Bulk oxide, cathodic and anodic regions have been analysed from the charge build-up point of view, as well as the stress induced generation of Si/SiO 2 fast interface state density. A physical interpretation of experimental results has been proposed, involving two types of stress induced positive charge building up at interface regions. It is shown that a critical oxide thickness exists, under which the degradation mechanisms could be considerably different.