Abstract
The electrical and structural characteristics of thin nitrided thermal oxides prepared by rapid thermal nitridization (RTN) have been studied. Nitridization times vary between 3 s and 5 min in an ammonia ambient. Films have been characterized using Auger, ellipsometry, C-V and I-V techniques. RTN allows to form surface nitridized oxides (NO), surface-interface nitridized oxides (NON), and oxinitrides. The effective refractive index varies between 1.45 to 1.7. Catastrophic breakdown voltages of RTN oxides are up to 3 time higher than thermal oxides. Optically and electrically determined permitivities of RTN films agree closely. RTN induced flat band shifts for times shorter than 10 s at 1150 C and 100 A oxides are monotonic with the nitridization time and explained by positive fixed charges with a density of the order of 1 1011 cm-2without significant changes in the fast interface state density. RTN oxides show an excellent potential for submicron MOS technologies.
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