Abstract
Thin crystalline silicon films supported by a substrate can be obtained by zone melting recrystallization. In this study a model for the stress generated in the substrate during this process and for the final stress in the thin silicon film is presented. For a given structure the stress is determined by the preheating temperature only. In the substrate compressive stress is induced by the localized heating inherent to the ZMR process. The moving heater introduces a tensile stress component in the final SOI film. If a line shaped heat source is used, this tensile stress is non-equi-axed. The presented model can account for a wide variety of reported experimental results.
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