Abstract
The surface stress induced by energetic implants (Ar, Xe) promotes ambient hydration (max.∼1 at.%) into Al 2 O 3 for collisional deposition energies of 10 21 –10 22 keV cm −3 . Al implants are anomalous in that they induce hydration above 10 21 keV cm −3 that rises near-linearly with no saturation at the highest deposition levels (∼10 24 keV cm −3 ). Both Al and H produce anomalously large F-centre concentrations; stress measurements show near-coincidence behaviour reflecting their influence on O-vacancy production.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
