Ion implantation effects in Al 2O 3: hydration and optical absorption

Abstract

Implants (Ar, Xe) into α-Al 2O 3 result in H uptake from the ambient atmosphere. The H inventories tended toward maximization at levels between 10 21 and 10 22 keV/cm 3 with decreased uptake at the higher levels (10 23–10 24 keV/cm 3). Al implants showed little H incursion below 10 21 keV/cm 3 followed by a near-linear increase with no saturation observed for the highest deposition values (≈ 10 23 keV/cm 3). Al implants also produce anomalously large F-center concentrations due to locally high Al concentrations and track the increases established for H uptake. The optical measurements are compared with those for H implants which also yield anomalously large F-center concentrations.