Abstract
<sub></sub>Hafnium oxide/silicon dioxide (HfO<sub>2</sub>/SiO<sub>2</sub>) multilayers were prepared by electron-beam evaporation. The total force per unit width (F/w) during and after deposition was determined by the change of the substrate curvature measured in situ. Stress induced by water absorption is a major component of the film stress evolution in atmospheric environment. Growth stress was analyzed to understand the role of the sublayers and the influence of the underlayers’ structural features. The substrate material affects the stress evolutions in both HfO<sub>2</sub> films and SiO<sub>2</sub> films. The structural feature of the HfO<sub>2</sub> layer onto which SiO<sub>2</sub> was deposited has a significant effect on the stress evolution of the SiO<sub>2</sub> layer.
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