Abstract
The total force per unit width ( F/ W) in the film during isochronal annealing of the Co/Si and Co/Ti/Si systems were measured using a laser scanning method for substrate curvature measurements. During isochronal annealing of the sample at a ramp rate of 5 °C min −1, several abrupt changes of F/ W were observed. The correlation between the phase transformation of cobalt silicides and the abrupt changes of F/ W was found. For these two systems, formation of Co 2Si and transition of Co 2Si to CoSi induce compressive changes in F/ W, while transformation of CoSi to CoSi 2 induces tensile changes in F/ W. With Ti interlayer increasing from 0 to 9 nm, the CoSi 2 formation temperature is raised from 509 to 673 °C and the magnitude of the maximum change in F/ W is reduced from 160 to 80 N m −1.
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