Abstract
Ferroelectric thin films are currently being used to develop tunable microwave circuits based on the electric-field dependence of the dielectric constant. Perovskite Ba 0 . 5 Sr 0 . 5 TiO 3 thin films were deposited on Pt/Ti/SiO 2 /Si and LSCO/Pt/Ti/SiO 2 /Si substrates by radio frequency magnetron sputtering. Extensive X-ray diffraction studies exhibit good in-plane relationship of Ba 1 - x Sr x TiO 3 (BSTO)// La 0 . 5 Sr 0 . 5 CoO 3 (LSCO). At the applied voltage of 7 V, the tunability values of barium strontium titanate (BST) films grown on Pt and LSCO/Pt were nearly 2.2:1 and 2.8:1, respectively. The change of dielectric properties in BST/LSCO and BST/Pt is attributed to the change in the film stress and the film orientation.
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