Abstract
ABSTRACT Stress controlled epitaxial ferroelectric Ba0.5Sr0.5TiO3 (BST) films have been deposited on Gd2O3/SrTiO3 by pulsed laser deposition with oxygen background pressure of 200 mTorr at the deposition temperature of 750°C. In order to control the stress in BST films, oxygen pressures for Gd2O3 buffer layers have been varied from 0.1 to 100 mTorr, while that of BST films have been fixed at 200 mTorr. It has been found that the lattice parameters of the BST films deposited on Gd2O3 were changed. Furthermore, microwave properties of co-planar waveguide (CPW) fabricated on BST films were investigated by a HP 8510C vector network analyzer from 1–20 GHz. Large dielectric tunabilities were observed from the CPW's fabricated on BST films deposited on Gd2O3 layers deposited at low and high oxygen pressures, 0.1 and 100 mTorr, respectively.
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