Abstract
Effects of stress on the interdiffusion behavior in long-period Si0.7Ge0.3/Si is examined using x-ray diffraction and Raman spectroscopy. Symmetrically and asymmetrically strained superlattices have been examined, and an activation energy for interdiffusion of 3.9 and 4.6 eV has been obtained, respectively. Furthermore, an enhanced interdiffusion has been measured for the asymmetrically strained superlattice when subjected to an external tensile stress during annealing. Thus, enhanced intermixing has been measured whenever the Si barrier layers experience tensile stress during annealing. In addition, Raman results confirm the enhancement of Ge diffusion into the Si barriers when annealed under tensile stress.
Published Version
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