Abstract
In this study, the n-channel metal oxide semiconductor file effect transistor (MOSFET) with contact-etch-stop-layer (CESL) stressor, SiGe channel, and dummy poly gate is proposed. The simulated technique is utilized to explore the stress distribution of nMOSFET in the channel region induced by foregoing mechanical. The simulation results indicated the SiGe channel significantly affected the stress distribution within the channel region. The effect of dummy poly gate is discussed, including the dummy poly gate number and various pitches of the dummy poly gate. The simulation results indicate that the pitch of the dummy poly gate substantially influences the number of dummy poly gates. The relationships between stress distribution in the channel and dummy poly gate layout could be understood clearly.
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