Abstract
The residual stress in GaN film grown on (0001) α-Al2O3 substrate at 450–500 °C by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR–PECVD) is investigated. Macro deformation analysis reveals a low level of compressive stress, from −0.46 GPa to −1.03 GPa in GaN/Sapphire. Low growth temperature and high N2:TMG flow ratio contributes to decreasing of residual stress. A blue shift for the edge peak in photoluminescence analysis (PL) is related to compressive stress. Roughness statistics and AFM morphology of GaN film show a fine smoothness and uniform surface. All results demonstrate that ECR-PECVD process is favorable for depositing GaN films at low temperature.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
