Abstract
The alternating current (AC)-driven metal-oxide-semiconductor (MOS) structured electroluminescent (EL) devices currently received great attention and are continuously developed due to low-voltage system requirements compared to conventional thin-film EL devices. They shared great advantages of facile fabrication and low power consumption. However, they are not ready for commercial use due to inadequate optical performance. To resolve this issue, this paper presents three enhancement strategies of the narrowband green emission of MOS-EL device on a silicon substrate, which results from the 4T1 → 6A1 transition of the dopants from ZnGa2O4:Mn2+, Ce3+ emitting layer by effective energy transfer from the blue emission of Ce3+ to the green emission of Mn2+ under high electric field. The concentrations of Mn2+ and Ce3+ co-dopants (1), and the annealing temperatures (2) are optimized, and the electrical-optical properties with varying voltage and frequency (3) are investigated. As a result, our MOS EL device generates a large surface-emission EL light with a fourfold-enhanced EL performance. In summary, this research offers a new strategy to resolve the insufficient performance of MOS-EL devices with promising optical properties.
Published Version
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