Strategies and Requisites of Testing LSI/VLSI Devices

Abstract

Click to increase image sizeClick to decrease image size Additional informationNotes on contributorsM M FazilM M Fazil received his MSc degree in Physics, specializing in advanced electronics from the University of Lucknow in 1962. After a brief training, and studies at Imperial College, London and at Brunei University, Uxbridge in the UK, he worked on a data-processing project (Bi-dimentional multiplexed scanner for paper chromatography using Altas computer) at Imperial College, University of London during 1965–68. He returned to India to take up the post of a Scientist at Central Scientific Instruments Organisation at Chandigarh where he worked on instrumentation till his retirement at the post of Deputy Director, on July 1996. He designed and developed a large number of digital electronic instruments, application of microprocessor in automatic control, test and measuring instruments/system. He headed a VLSI Tester group and was responsible for the development of ATE for the test of VLSI devices, first time in the country. He was also engaged in the design of remote control electronics for the Aerial Panoramic Camera. Received royalties and recognition, published 15 technical papers and popular articles for the science magazines. He is a Fellow of IETE, IndiaR P BajpaiR P Bajpai, was born on 21st September, 1944. He received PhD in Solid State Physics from Indian Institute of Technology, Delhi (1970), DSc from Hokkaido University, Japan (1974) in Materials and Semiconductor Technology. Dr Bajpai has worked as Mombusho Fellow in Japan; Alexander Von Humboldt Fellow in West Germany at Physikalisches Institute der Technischen Universitat, Clausthal-Zellerfeld; Senior Staff Scientist at State University ofNew York, Stony Brook, USA in the Department of Materials Science, Faculty of Engineering; Guest Professor at the Federal Swiss Institute of Technology (ETH), Zurich, Switzerland; Visiting Professor, University of Reims, France; Visiting Professor, Tohoku University (Institute of Electrical Communication Engineering), Sendai, Japan; Visiting Professor Hokkaido University, Sapporo, Japan and Gakuen University, Hokkaido, Japan for varying periods. Dr Bajpai has worked in the area of Solid State Physics, Phase Transformation, Thin Film Technology, Semiconductor Devices, R&D of Semiconductor Equipments for LSI/VLSI/ULSI/VHSIC applications and Ultra High Vaccum Technology. Dr Bajpai joined CSIO in 1978 on invitation from DG, CSIR to establish infrastructure and expertise in the area of surface science and microelectronics instrumentation. A number of capital equipments namely, Molecular Beam Epitaxy, a facility for 0.8 J.lm geometry replication by Stepper Optical Lithography, Electron Beam Evaporator, Auger Electron Spectrometer, ECR based Ion Beam Etcher, Reactive Ion Etcher, RF/DC Sputtering, LSIIVLSI Tester, Wafer/Rinser Dryer, etc have been developed undtr his direction. These state-of-art equipments are suitable for any modern fab-line in the area of semiconductor devices, flat panel displays, micromachining, etc. At present, he is Additional Director, CSIO, Chandigarh. His current research interests include III-V semiconductor devices, sensors, micromachines, etc. He has supervised a number of PhD and MTech theses. He has published more than I 00 research papers in national and international journals of repute. Dr Bajpai is senior member of several professional societies, including, Optical Society of India, The Institution of Electronics and Telecommunication Engineers, Electron Microscope Society of India, The International Union for Vacuum Science Techniques and Applications—Surface Science Group and Indian Vacuum Society.